Número de pieza
SGC-6389Z-EVB2
Fabricante
![RFMD](/logo/RFMD.png)
RF Micro Devices
![RFMD](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
Product Description
RFMD’s SGC-6389Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active-bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SGC-6389Z does not require a dropping resistor as compared to traditional Darlington amplifiers. The SGC-6389Z product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is internally matched to 50Ω.
FEATUREs
■ Single Fixed 5V Supply
■ No Dropping Resistor Required
■ Patented Self Bias Circuitry
■ Gain = 12.8dBm at 1950MHz
■ P1dB = 18.6dBm at 1950MHz
■ OIP3 = 34.5dBm at 1950MHz
■ Robust 1000V ESD, Class 1C HBM
APPLICATIONs
■ PA Driver Amplifier
■ Cellular, PCS, GSM, UMTS, WCDMA
■ IF Amplifier
■ Wireless Data, Satellite
Número de pieza
componentes Descripción
PDF
Fabricante
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50-4000 MHz Active Bias Silicon Germanium Cascadable Gain Block
Sirenza Microdevices => RFMD
50-4000 MHz Active Bias Silicon Germanium Cascadable Gain Block
Sirenza Microdevices => RFMD
50-4000 MHz Active Bias Silicon Germanium Cascadable Gain Block
Sirenza Microdevices => RFMD
50-4000 MHz Active Bias Silicon Germanium Cascadable Gain Block
Sirenza Microdevices => RFMD
50-4000 MHz Active Bias Silicon Germanium Cascadable Gain Block
Sirenza Microdevices => RFMD
50-4000 MHz Active Bias Silicon Germanium Cascadable Gain Block
Sirenza Microdevices => RFMD
50-4000 MHz Active Bias Silicon Germanium Cascadable Gain Block
Sirenza Microdevices => RFMD
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RF Micro Devices
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Sirenza Microdevices => RFMD