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SHF-0289 Hoja de datos - Sirenza Microdevices => RFMD

SHF-0289 image

Número de pieza
SHF-0289

componentes Descripción

Other PDF
  no available.

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page
4 Pages

File Size
85.8 kB

Fabricante
Sirenza
Sirenza Microdevices => RFMD Sirenza

Product Description
Sirenza Microdevices’ SHF-0289 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.

Product Features
• Now available in Lead Free, RoHS Compliant, & Green Packaging
• High Linearity Performance at 1.96 GHz
    +30 dBm P1dB
    +43 dBm OIP3
    +23.7 dBm IS-95 Channel Power
    +14.6 dB Gain
• +21.7 dBm W-CDMA Channel Power
• High Drain Efficiency (>50% at P1dB)
• See App Note AN-032 for circuit details


APPLICATIONs
• Analog and Digital Wireless Systems
• 3G, Cellular, PCS
• Fixed Wireless, Pager Systems

Page Link's: 1  2  3  4 

Número de pieza
componentes Descripción
PDF
Fabricante
0.05-6 GHz, 0.5 Watt GaAs HFET
Ver
Sirenza Microdevices => RFMD
0.05 - 6 GHz, 0.5 Watt GaAs HFET
Ver
Unspecified
0.05 - 6 GHz, 0.5 Watt GaAs HFET
Ver
Sirenza Microdevices => RFMD
0.05-12 GHz, 0.5 Watt GaAs HFET
Ver
Sirenza Microdevices => RFMD
0.05-3 GHz, 2 Watt GaAs HFET
Ver
Sirenza Microdevices => RFMD
0.05-3 GHz, 2 Watt GaAs HFET
Ver
Unspecified
DC-3 GHz, 1.0 Watt GaAs HFET
Ver
Unspecified
DC-3 GHz, 1.0 Watt GaAs HFET
Ver
Stanford Microdevices
DC-3 GHz, 2.0 Watt GaAs HFET ( Rev : RevB )
Ver
Stanford Microdevices
DC-3 GHz, 0.5 Watt GaAs HFET
Ver
Stanford Microdevices

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