Fabricante
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Vishay Semiconductors
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DESCRIPTION
The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.
CHARACTERISTICS
• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics
Número de pieza
componentes Descripción
PDF
Fabricante
N-Channel 100-V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 100-V (D-S) MOSFET
Unspecified
N-Channel 100-V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 100-V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 100-V (D-S) MOSFET
Vishay Semiconductors
N-Channel 100-V (D-S) MOSFET ( Rev : 2003 )
Vishay Semiconductors
N-Channel 100-V (D-S) MOSFET
Analog Power
N-Channel 100-V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 100-V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 100-V (D-S) MOSFET
VBsemi Electronics Co.,Ltd