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SKW07N120(2013) Hoja de datos - Infineon Technologies

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SKW07N120

Other PDF
  2008   lastest PDF  

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13 Pages

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Infineon
Infineon Technologies Infineon

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

● Lower Eoff compared to previous generation
● Short circuit withstand time – 10 μs
● Designed for:
   - Motor controls
   - Inverter
   - SMPS
● NPT-Technology offers:
   - very tight parameter distribution
   - high ruggedness, temperature stable behaviour
   - parallel switching capability
● Qualified according to JEDEC1 for target applications
● Pb-free lead plating; RoHS compliant
● Complete product spectrum and PSpice Models : //www.infineon.com/igbt/

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Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
Ver
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Ver
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
Ver
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
Ver
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Ver
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Ver
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
Ver
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
Ver
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
Ver
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
Ver
Infineon Technologies

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