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SM12T1(2017) Hoja de datos - ON Semiconductor

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SM12T1

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ESD Protection Diode Array
Dual Common Anode

These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium.

Specification Features:
• SOT−23 Package Allows Either Two Separate Unidirectional
   Configurations or a Single Bidirectional Configuration
• Working Peak Reverse Voltage Range − 12 V
• Standard Zener Breakdown Voltage Range − 13.3 V to 15.75 V
• Peak Power − 300 Watt (8 X 20 μs)
• Low Leakage
• Flammability Rating UL 94 V−0

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Número de pieza
componentes Descripción
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Fabricante
ESD Protection Diode Array ( Rev : 2017 )
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ON Semiconductor
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Vishay Semiconductors
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Jinan Jing Heng Electronics Co., Ltd.
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Jinan Jing Heng Electronics Co., Ltd.
ESD Protection Diode Array ( Rev : 2018 )
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ON Semiconductor
ESD Protection Diode Array
Ver
Jinan Jing Heng Electronics Co., Ltd.
ESD Protection Diode Array
Ver
Jinan Jing Heng Electronics Co., Ltd.
ESD Protection Diode Array
Ver
Vishay Semiconductors
ESD Protection Diode Array
Ver
Vishay Semiconductors
ESD Protection Diode Array
Ver
ON Semiconductor

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