Product Description
Stanford Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.

Product Features
• High Linearity Performance: +48 dBm Typ. OIP3 at 900 MHz +24 dBm IS-95 CDMA Channel Power at -45 dBc ACP
• On-chip Active Bias Control
• High Gain: 32.5 dB Typ.
• Patented High Reliability GaAsHBT Technology
• Surface-Mountable Plastic Package

APPLICATIONs
• IS-95 CDMA Systems
• Multi-Carrier Applications
• AMPS, ISM Applications