Product Description
Stanford Microdevices’ SPF-2086TK is a high performance PHEMT Gallium Arsenide FET utilitzing 0.25 micron long by 300 micron wide Schottky barrier gates.
This device is ideally biased at Vds=3V and Id=20mA for lowest noise performance and battery powered requirements. At 5V 40mA bias it delivers excellent linearity. The SPF-2086TK provides ideal performance as driver stages in many commercial, industrial and military LNA applications.

Product Features
• High Gain: 20 dB at 1900 MHz
• +20 dBm Output Power at P1dB
• Low Noise Figure: 0.4 dB NF at 1900 MHz
• Low Current Draw: 20 mA typ. at 3.0V

APPLICATIONs
• LNA for Cellular, PCS, CDPD
• Wireless Data, SONET
• Driver Stage for low power applications