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SSF2616E Hoja de datos - Silikron Semiconductor Co.,LTD.

SSF2616E image

Número de pieza
SSF2616E

componentes Descripción

Other PDF
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page
7 Pages

File Size
433.2 kB

Fabricante
SILIKRON
Silikron Semiconductor Co.,LTD. SILIKRON

DESCRIPTION
The SSF2616E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

GENERAL FEATURES
● VDS = 20V,ID = 7A
   RDS(ON) < 30mΩ @ VGS=2.5V
   RDS(ON) < 26mΩ @ VGS=3.1V
   RDS(ON) < 23mΩ @ VGS=4V
   RDS(ON) < 22mΩ @ VGS=4.5V

   ESD Rating: 2000V HBM

● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package


APPLICATION
● Battery protection
● Load switch
● Power management


Número de pieza
componentes Descripción
PDF
Fabricante
Battery protection
Ver
Silikron Semiconductor Co.,LTD.
Battery protection
Ver
Silikron Semiconductor Co.,LTD.
Battery protection
Ver
Silikron Semiconductor Co.,LTD.
Battery Protection
Ver
Silikron Semiconductor Co.,LTD.
Battery protection
Ver
Silikron Semiconductor Co.,LTD.
Battery protection
Ver
Silikron Semiconductor Co.,LTD.
Battery protection
Ver
Silikron Semiconductor Co.,LTD.
Battery protection
Ver
Silikron Semiconductor Co.,LTD.
Battery protection
Ver
Silikron Semiconductor Co.,LTD.
Battery protection
Ver
Silikron Semiconductor Co.,LTD.

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