Fabricante
Silikron Semiconductor Co.,LTD.
DESCRIPTION
The SSF8521 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.
GENERAL FEATURES
● MOSFET
VDS = -20V,ID = -4.4A
RDS(ON) < 170mΩ @ VGS=-1.8V
RDS(ON) < 110mΩ @ VGS=-2.5V
RDS(ON) < 80mΩ @ VGS=-4.5V
SCHOTTKY
VR = 20V, IF = 4.1A, VF<0.575V @ 1.0A
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
APPLICATION
● DC-DC conversion applications
● Load switch
● Power management
Número de pieza
componentes Descripción
PDF
Fabricante
High power and current handing capability
Unspecified
High Power and current handing capability
Silikron Semiconductor Co.,LTD.
High Power and current handing capability
Silikron Semiconductor Co.,LTD.
High Power and current handing capability
Silikron Semiconductor Co.,LTD.
High Power and current handing capability
Silikron Semiconductor Co.,LTD.
High Power and current handing capability
Silikron Semiconductor Co.,LTD.
High Power and current handing capability
Silikron Semiconductor Co.,LTD.
High Power and current handing capability
Silikron Semiconductor Co.,LTD.
High Power and current handing capability
Silikron Semiconductor Co.,LTD.
High power and current handing capability
Unspecified