DESCRIPTION
SSI3439J is N and P Channel enhancement MOS Field Effect Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for the use in DC-DC conversion, load switch and level shift.

FEATURES
• Surface mount package
• Low RDS(ON)
• ESD-protecting gate

APPLICATIONS
• Load/power switching
• Interfacing switching
• Battery management for Ultra small portable electronics