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SSP7438N Hoja de datos - Secos Corporation.

SSP7438N image

Número de pieza
SSP7438N

Other PDF
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page
2 Pages

File Size
199 kB

Fabricante
Secos
Secos Corporation. Secos

DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.


FEATURES
• Low RDS(on) provides higher efficiency and extends battery life.
• Low thermal impedance copper leadframe SOP-8PP saves board
   space.
• Fast switching speed.
• High performance trench technology.


APPLICATION
   DC-DC converters and power management in
   portable and battery-powered products such as computers,
   printers, PCMCIA cards, cellular and cordless telephones


Número de pieza
componentes Descripción
PDF
Fabricante
13 A, 60 V, RDS(ON) 22 mΩ N-Channel Enhancement MOSFET
Ver
Secos Corporation.
13 A, 60 V, RDS(ON) 22 mΩ N-Channel Enhancement MOSFET ( Rev : 2010 )
Ver
Secos Corporation.
17 A, 30 V, RDS(ON) 13.5 mΩ N-Channel Enhancement MOSFET
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24 A, 30 V, RDS(ON) 4.6 mΩ N-Channel Enhancement MOSFET
Ver
Secos Corporation.
17 A, 30 V, RDS(ON) 13.5 mΩ N-Channel Enhancement MOSFET ( Rev : 2010 )
Ver
Secos Corporation.
24 A, 30 V, RDS(ON) 4.6 mΩ N-Channel Enhancement MOSFET ( Rev : 2010 )
Ver
Secos Corporation.
27 A, 30 V, RDS(ON) 4.9 mΩ N-Channel Enhancement MOSFET ( Rev : 2010 )
Ver
Secos Corporation.
27 A, 30 V, RDS(ON) 4.9 mΩ N-Channel Enhancement MOSFET
Ver
Secos Corporation.
24 A, 30 V, RDS(ON) 4.9 mΩ N-Channel Enhancement MOSFET
Ver
Secos Corporation.
6 A, 30 V, RDS(ON) 32 mΩ N-Channel Enhancement Mode MOSFET
Ver
Secos Corporation.

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