SSS10N60A Hoja de datos - Fairchild Semiconductor
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SSS10N60A
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Fairchild Semiconductor
Advanced Power MOSFET
BVDSS= 600 V RDS(on) = 0.8 ID= 5.1 A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 (Max.) @ VDS= 600V
Low RDS(ON) : 0.646 (Typ.)
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