DESCRIPTION
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds

■ HIGH VOLTAGE CAPABILITY
■ NPN TRANSISTOR
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED

APPLICATIONS
■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING
■ SWITCH MODE POWER SUPPLIES