DESCRIPTION
ST2342 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.

FEATURE
● 20V/4.8A, RDS(ON) = 26mΩ (Typ.) @VGS = 4.5V
● 20V/4.5A, RDS(ON) = 28mΩ @VGS = 2.5V
● 20V/4.0A, RDS(ON) = 36mΩ @VGS = 1.8V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
● SOT-23 package design