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Número de pieza
STB12NK80Z

Other PDF
  2005   2007  

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22 Pages

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664.1 kB

Fabricante
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of STs well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.


FEATUREs
■ Extremely high dv/dt capability
■ Improved esd capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing reliability


APPLICATIONs
■ Switching applications

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Número de pieza
componentes Descripción
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Fabricante
N-channel 800 V, 0.19 Ω typ., 19.5 A SuperMESH™5 Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages ( Rev : 2013 )
Ver
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N-channel 950 V, 0.68 Ω typ., 10 A Zener-protected SuperMESH3™ Power MOSFET in TO-220FP, I2PAKFP, TO-220 and TO-247
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N-channel 600 V, 0.48 Ω, 13 A, TO-220, TO-220FP, D2PAK TO-247 Zener-protected SuperMESH™ Power MOSFET ( Rev : 2009 )
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N-channel 600 V, 0.48 Ω, 13 A, TO-220, TO-220FP, D2PAK TO-247 Zener-protected SuperMESH™ Power MOSFET
Ver
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