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STB15N65M5(2018) Hoja de datos - STMicroelectronics

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STB15N65M5

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24 Pages

File Size
866.1 kB

Fabricante
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
These devices are N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.


FEATUREs
• Extremely low RDS(on)
• Low gate charge and input capacitance
• Excellent switching performance
• 100% avalanche tested


APPLICATIONs
• Switching applications


Número de pieza
componentes Descripción
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Fabricante
N-channel 650 V, 0.198 Ω typ., 15 A, MDmesh™ M5 Power MOSFETs in D²PAK and DPAK packages
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N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ M5 Power MOSFETs in a DPAK, D²PAK, TO-220FP and TO-220 packages ( Rev : 2018 )
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N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFETs in D²PAK and DPAK packages
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N-channel 650 V, 0.124 Ω, 22 A, MDmesh M5 Power MOSFETs in D2PAK, TO‑220FP, TO‑220 and TO-247 packages ( Rev : 2019 )
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N-channel 650 V, 0.230 Ω typ., 12 A MDmesh™ M5 Power MOSFET in a DPAK package ( Rev : 2018 )
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Automotive-grade N-channel 600 V, 5 A, 0.84 Ω typ., MDmesh™ II Power MOSFETs in D2PAK and DPAK packages ( Rev : 2013 )
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N-channel 650 V, 390 mΩ typ., 8.5 A MDmesh M5 Power MOSFET in a TO-220FP and TO-220 packages ( Rev : 2022 )
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