STB23N80K5(2015) Hoja de datos - STMicroelectronics
Número de pieza
STB23N80K5
componentes Descripción
Other PDF
PDF
page
15 Pages
File Size
842.4 kB
Fabricante
STMicroelectronics
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
FEATUREs
• Industry’s lowest RDS(on) x area
• Industry’s best figure of merit (FoM)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
Número de pieza
componentes Descripción
PDF
Fabricante
N-channel 800 V, 0.23 Ω typ., 16 A MDmesh™ K5 Power MOSFET in a TO-247 package
STMicroelectronics
N-channel 800 V, 0.23 Ω typ., 16 A MDmesh™ K5 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFET in a TO-220FP package ( Rev : 2014 )
STMicroelectronics
N-channel 800 V, 1.50 Ω typ., 4 A MDmesh™ K5 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 800 V, 1.50 Ω typ., 4 A MDmesh™ K5 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 800 V, 0.95 Ω typ., 3.6 A MDmesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV package
STMicroelectronics
N-channel 800 V, 0.37 Ω typ.,12 A MDmesh™ K5 Power MOSFET in an I²PAKFP package
STMicroelectronics
N-channel 1200 V, 1.65 Ω typ., 6 A, MDmesh K5 Power MOSFET in a TO-3PF package
STMicroelectronics
N-channel 850 V, 0.2 Ω typ., 19 A MDmesh™ K5 Power MOSFET in a TO-247 package
STMicroelectronics
Share Link: