Description
This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “Single Feature Size™“ strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge.General features

General features
■ Standard threshold drive
■ 100% avalanche tested

APPLICATIONs
■ Switching application
   – Automotive