STD80N6F6(2014) Hoja de datos - STMicroelectronics
Número de pieza
STD80N6F6
componentes Descripción
Other PDF
PDF
page
15 Pages
File Size
680.4 kB
Fabricante
STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
• Designed for automotive applications and
AEC-Q101 qualified
• Low gate charge
• Very low on-resistance
• High avalanche ruggedness
APPLICATIONs
• Switching applications
Número de pieza
componentes Descripción
PDF
Fabricante
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