STD9NM50N Hoja de datos - STMicroelectronics
Número de pieza
STD9NM50N
componentes Descripción
Other PDF
PDF
page
17 Pages
File Size
468.5 kB
Fabricante
STMicroelectronics
Description
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATIONs
■ Switching application
Número de pieza
componentes Descripción
PDF
Fabricante
N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh™ Power MOSFET ( Rev : 2006 )
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N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh™ Power MOSFET ( Rev : 2008_01 )
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N-CHANNEL 600V - 0.9Ω - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh™ Power MOSFET ( Rev : 2003 )
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