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STF7NM60N(2018) Hoja de datos - STMicroelectronics

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STF7NM60N

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26 Pages

File Size
561.7 kB

Fabricante
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.

Features
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance

Applications
• Switching applications

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Número de pieza
componentes Descripción
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Fabricante
N-channel 600 V, 0.63 Ω typ., 6.5 A MDmesh™ II Power MOSFETs in DPAK, TO-220FP and TO-220 packages ( Rev : 2018 )
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N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH™ Power MOSFETs in D²PAK, IPAK, DPAK, TO-220 and TO-220FP packages ( Rev : 2018 )
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N-channel 620 V, 2.9 Ω typ., 2.2 A MDmesh™ K3 Power MOSFETs in DPAK, TO-220FP and IPAK packages ( Rev : 2018 )
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N-channel 525 V, 1.2 Ω typ., 4.4 A MDmesh™ K3 Power MOSFETs in DPAK, TO-220FP and IPAK packages ( Rev : 2018 )
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N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh™ M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages
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