Description
This N-Channel enhancement mode MOSFET is the latest refinement of STMicroelectronics unique “Single Feature Size™“strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.

General features
■ 100% avalanche tested
■ Standard threshold drive

APPLICATIONs
■ High current, switching application
   – Automotive