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STL19N60DM2(2014) Hoja de datos - STMicroelectronics

STL19N60DM2 image

Número de pieza
STL19N60DM2

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page
13 Pages

File Size
675.8 kB

Fabricante
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge and time (Qrr, trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.


FEATUREs
• Fast-recovery body diode
• Extremely low gate charge and input
   capacitance
• Low on-resistance R
   DS(on)
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected


APPLICATIONs
• Switching applications


Número de pieza
componentes Descripción
PDF
Fabricante
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