STL23NS3LLH7 Hoja de datos - STMicroelectronics
Número de pieza
STL23NS3LLH7
componentes Descripción
Other PDF
no available.
PDF
page
14 Pages
File Size
672.2 kB
Fabricante
STMicroelectronics
Description
This N-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low onresistance. The device also offers ultra-low capacitances for higher switching frequency operations.
FEATUREs
• Very low on-resistance
• Very low Qg
• High avalanche ruggedness
• Embedded Schottky diode
APPLICATIONs
• Switching applications
Número de pieza
componentes Descripción
PDF
Fabricante
N-channel 30 V, 0.0016 Ω typ., 160 A STripFET™ H7 Power MOSFET plus monolithic Schottky in a PowerFLAT™ 5x6
STMicroelectronics
N-channel 30 V, 0.0033 Ω typ., 27 A STripFET™ H7 Power MOSFET plus monolithic Schottky in a PowerFLAT™ 5x6
STMicroelectronics
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