Description
These devices power distribution switches are intended for application where heavy capacitive loads and short circuits are likely to be encountered. These devices incorporate 80mΩ N channel MOSFET high-side power switches for power-distribution systems that require multiple powers switches in a single package. Each switch is controlled by an independent logic enable input. Gate drive is provided by an internal charge pump designed to control the power-switch rise times and fall times to minimize current surges during switching.

FEATUREs
■ 80mΩ HIGH-SIDE MOSFET SWITCH
■ 1000mA CONTINUOUS CURRENT PER CHANNEL
■ INDEPENDENT THERMAL AND SHORT CIRCUIT PROTECTION WITH OVERCURRENT LOGIC OUTPUT
■ OPERATING RANGE FROM 2.7V TO 5.5V
■ 2.5ms TYPICAL RISE TIME
■ UNDERVOLTAGE LOCKOUT
■ 10µA MAXIMUM STANDBY SUPPLY CURRENT
■ AMBIENT TEMPERATURE RANGE, 0°C TO 85°C
■ 8kV ESD PROTECTION
■ REVERSE CURRENT PROTECTION
■ FAULT-BLANKING