Description
This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “single feature size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge.

General features
■ Ultra low on-resistance
■ 100% avalanche tested

APPLICATIONs
■ Switching application
   – Automotive