STP18N60M2(2014) Hoja de datos - STMicroelectronics
Número de pieza
STP18N60M2
componentes Descripción
Other PDF
PDF
page
21 Pages
File Size
1.2 MB
Fabricante
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
FEATUREs
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
• LLC converters, resonant converters
Número de pieza
componentes Descripción
PDF
Fabricante
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