STP260N4F7 Hoja de datos - STMicroelectronics
Número de pieza
STP260N4F7
componentes Descripción
Other PDF
no available.
PDF
page
13 Pages
File Size
672.4 kB
Fabricante
STMicroelectronics
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
FEATUREs
• Among the lowest RDS(on) on the market
• Excellent FoM (figure of merit)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
APPLICATIONs
• Switching applications
Número de pieza
componentes Descripción
PDF
Fabricante
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