STP80NF10 - VBsemi Electronics Co.,Ltd Hoja de datos

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STP80NF10 Hoja de datos - VBsemi Electronics Co.,Ltd

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STP80NF10

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7 Pages

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871.4 kB

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VBsemi Electronics Co.,Ltd

FEATURES
• TrenchFET® Power MOSFET
• 175 °C Maximum Junction Temperature
• Compliant to RoHS Directive 2002/95/EC

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N-Channel 100-V (D-S) 175°C MOSFET ( Rev : 2000 )

Vishay Semiconductors

N-Channel 100 V (D-S), 175 °C MOSFET

Vishay Semiconductors

N-Channel 100 V (D-S) 175 °C MOSFET

Vishay Semiconductors

N-Channel 100-V (D-S) 175°C MOSFET ( Rev : 2004 )

Vishay Semiconductors

N-Channel 100-V (D-S) 175°C MOSFET ( Rev : 2002 )

Vishay Semiconductors