DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.090 Ω @ 4.5 V
■ TYPICAL RDS(on) = 0.1 Ω @ 2.7 V
■ STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY
■ ULTRA LOW THRESHOLD GATE DRIVE (2.7 V)

APPLICATIONS
■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
■ MOBILE PHONE APPLICATIONS