STU458S Hoja de datos - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Número de pieza

STU458S

componentes Descripción

N-Channel MOSFET uses advanced trench technology

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page

5 Pages

File Size

1.4 MB

Fabricante

SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 

Description：

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features：

1) VDS=40V,ID=60A,RDS(ON)<12mΩ @VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

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