STW24NM65N Hoja de datos - STMicroelectronics
Número de pieza
STW24NM65N
componentes Descripción
Other PDF
no available.
PDF
page
19 Pages
File Size
544.9 kB
Fabricante
STMicroelectronics
Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATION
■ Switching applications
Número de pieza
componentes Descripción
PDF
Fabricante
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