DESCRIPTION
• This Power MOSFET is the latest development of
   STMicroelectronis unique "Single Feature Size™"
   strip-based process. The resulting transistor shows
   extremely high packing density for low on-resistance,
   rugged avalanche characteristics and less critical alignment
   steps therefore a remarkable manufacturing reproducibility.

FEATURES
• Drain Current –ID=8A@ TC=25℃
• Drain Source Voltage-
   : VDSS=900V(Min)
• Static Drain-Source On-Resistance
   : RDS(on) =1.3Ω (Max)
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation