GENERAL DESCRIPTION
SVD2N60T is an N-channel enhancement mode power MOS field effect  transistor  which  is  produced  using  Silan  proprietary SRin™ structure DMOS technology. The improved planar stripe cell and  the  improved  guarding  ring  terminal  have  been  especially tailored to minimize on-state resistance, provide superior switching performance,  and  withstand  high  energy  pulse  in  the  avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.

FEATURES
*  2A,600V,RDS(on)(typ.)=4.0W@VGS=10V
*  Low gate charge
*  Low Crss
*  Fast switching
*  Improved dv/dt capability