Fabricante
Silan Microelectronics
GENERAL DESCRIPTION
SVD8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
* 8A,600V,RDS(on)˄typ˅=0.96W@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Improved dv/dt capability
Número de pieza
componentes Descripción
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