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T4312816A Hoja de datos - Taiwan Memory Technology

T4312816A image

Número de pieza
T4312816A

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page
29 Pages

File Size
696 kB

Fabricante
TMT
Taiwan Memory Technology TMT

GRNERAL DESCRIPTION
The T4312816A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with high performance CMOS technology .


FEATURES
• 3.3V power supply
• Four banks operation
• LVTTL compatible with multiplexed address
• All inputs are sampled at the positive going edge of system clock
• Burst Read Single-bit Write operation
• DQM for masking
• Auto refresh and self refresh
• 64ms refresh period (4K cycle)
• MRS cycle with address key programs
    - CAS Latency ( 2 & 3 )
    - Burst Length ( 1 , 2 , 4 , 8 & full page)
    - Burst Type (Sequential & Interleave)
• Available package type in 54 pin TSOP(II)
• Operating temperature : 0 ~ +70 °C

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Número de pieza
componentes Descripción
PDF
Fabricante
8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM
Ver
Taiwan Memory Technology
8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM
Ver
Taiwan Memory Technology
4Banks x 4M x 16Bit Synchronous DRAM
Ver
Hynix Semiconductor
4 Banks x 8M x 16Bit Synchronous DRAM
Ver
Hynix Semiconductor
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
Ver
Taiwan Memory Technology
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
Ver
Taiwan Memory Technology
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
Ver
Taiwan Memory Technology
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
Ver
Taiwan Memory Technology
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
Ver
Taiwan Memory Technology
1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Ver
Samsung

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