DESCRIPTION
   The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits. The TC58FVT641/B641 features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVT641/B641 also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation.

FEATURES
• Power supply voltage
   VDD = 2.7 V~3.6 V
• Operating temperature
   Ta = −40°C~85°C
• Organization
   8M × 8 bits / 4M × 16 bits
• Functions
   Simultaneous Read/Write
   Auto Program, Auto Erase
   Fast Program Mode / Acceleration Mode
   Program Suspend/Resume
   Erase Suspend/Resume
   data polling / Toggle bit
   block protection, boot block protection
   Automatic Sleep, support for hidden ROM area
   common flash memory interface (CFI)
   Byte/Word Modes
• Block erase architecture
   8 × 8 Kbytes / 127 × 64 Kbytes
• Boot block architecture
   TC58FVT641FT/XB: top boot block
   TC58FVB641FT/XB: bottom boot block
• Mode control
   Compatible with JEDEC standard commands
• Erase/Program cycles
   105 cycles typ.
• Access time
   70 ns (CL: 30 pF)
   100 ns (CL: 100 pF)
• Power consumption
   10 µA (Standby)
   30 mA (Read operation)
   15 mA (Program/Erase operations)
• Package
   TSOPI48-P-1220-0.50 (weight: 0.52 g)
   P-TFBGA63-0911-0.80AZ (Weight: TBD)