Key Features
• 0.25 um pHEMT Technology
• 14 dB Nominal Gain at 23GHz
• 30 dBm Nominal P1dB
• 38dBm OTOI typical
• Typical 15dB Input/Output RL
• Bias 6 - 7V @ 540 mA
• On-chip power detector diode

Primary Applications
• Point-to-Point Radio
• Point-to-Multipoint Communications
• Ka Band Sat-Com