DESCRIPTION
The TriQuint TGF4250-EEU is a single gate 4.8 mm discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high efficiency power applications up to 10. 5- GHz in Class A and Class AB operation. Typical performance at 2- GHz is 34 - dBm power output, 13- dB gain, and 63% PAE.
Bond pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire-bonding processes. The TGF4250-EEU is readily assembled using automatic equipment.

● 4800 µm x 0.5 µm HFET
● Nominal Pout of 34-dBm at 8.5-GHz
● Nominal Gain of 8.5-dB at 8.5-GHz
● Nominal PAE of 53% at 8.5-GHz
● Suitable for high reliability applications
● 0,572 x 1,334 x 0,102 mm (0.023 x 0.053 x 0.004 in.)