FEATURES■ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 29.0dBm■ HIGH POWER P1dB=40.5dBm at 14.0GHz to 14.5GHz■ HIGH GAIN G1dB=6.0 dB at 14.0 GHz to 14.5GHz■ BROAD BAND INTERNALLY MATCHED FET■ HERMETICALLY SEALED PACKAGE