TJ9A10M3 Hoja de datos - Toshiba
Número de pieza
TJ9A10M3
componentes Descripción
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9 Pages
File Size
234.5 kB
Fabricante
Toshiba
Features
(1) Low drain-source on-resistance: RDS(ON) = 120 mΩ (typ.) (VGS = -10 V)
(2) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V)
(3) Enhancement mode: Vth = -2.0 to -4.0 V (VDS = -10 V, ID = -1 mA)
APPLICATIONs
• Switching Voltage Regulators
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