TK10A60D(Q,M) Hoja de datos - Toshiba
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TK10A60D(Q,M)
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• Low drain-source ON-resistance: RDS (ON)= 0.58 Ω(typ.)
• High forward transfer admittance: |Yfs| = 6.0 S (typ.)
• Low leakage current: IDSS= 10 μA(max)(VDS= 600 V)
• Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
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Switching Regulator Applications / TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Toshiba
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