TK12D60U - Toshiba Hoja de datos

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TK12D60U Hoja de datos - Toshiba

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TK12D60U

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ )

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Switching Regulator Applications

• Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 600 V)
• Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

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