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TK12P60W Hoja de datos - Toshiba

TK12P60W image

Número de pieza
TK12P60W

Other PDF
  2012  

PDF
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page
10 Pages

File Size
243.4 kB

Fabricante
Toshiba
Toshiba Toshiba

Features
(1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.)
   by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA)


APPLICATIONs
• Switching Voltage Regulators


Número de pieza
componentes Descripción
PDF
Fabricante
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MOSFETs Silicon N-Channel MOS (DTMOSIV)
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MOSFETs Silicon N-Channel MOS (DTMOSIV) ( Rev : 2012 )
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MOSFETs Silicon N-Channel MOS (DTMOSIV)
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MOSFETs Silicon N-Channel MOS (DTMOSIV)
Ver
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MOSFETs Silicon N-Channel MOS (DTMOSIV)
Ver
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV)
Ver
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV)
Ver
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV) ( Rev : 2012 )
Ver
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV) ( Rev : 2012 )
Ver
Toshiba

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