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TK200F04N1L Hoja de datos - Toshiba

TK200F04N1L image

Número de pieza
TK200F04N1L

Other PDF
  no available.

PDF
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page
11 Pages

File Size
297 kB

Fabricante
Toshiba
Toshiba Toshiba

Features
(1) AEC-Q101 qualified
(2) Low drain-source on-resistance: RDS(ON) = 0.78 mΩ (typ.) (VGS = 10 V)
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
(4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA)


APPLICATIONs
• Automotive
• Switching Voltage Regulators
• DC-DC Converters
• Motor Drivers


Número de pieza
componentes Descripción
PDF
Fabricante
MOSFETs Silicon N-channel MOS (U-MOSVIII-H) ( Rev : 2012 )
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Toshiba
MOSFETs Silicon N-channel MOS (U-MOSVIII-H) ( Rev : 2012 )
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Toshiba
MOSFETs Silicon N-channel MOS (U-MOSVIII-H) ( Rev : 2014 )
Ver
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSVIII-H)
Ver
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSVIII-H)
Ver
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSVIII-H)
Ver
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSVIII-H)
Ver
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSVIII-H)
Ver
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSVIII-H)
Ver
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSVIII-H) ( Rev : 2012 )
Ver
Toshiba

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