TK42E12N1 Hoja de datos - Toshiba
Número de pieza
TK42E12N1
componentes Descripción
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page
9 Pages
File Size
245.6 kB
Fabricante
Toshiba
Features
(1) Low drain-source on-resistance: RDS(ON) = 7.8 mΩ (typ.) (VGS = 10 V)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)
(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)
APPLICATIONs
• Switching Voltage Regulators
Número de pieza
componentes Descripción
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