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TK50P03M1 Hoja de datos - Toshiba

TK50P03M1 image

Número de pieza
TK50P03M1

Other PDF
  no available.

PDF
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page
9 Pages

File Size
278.6 kB

Fabricante
Toshiba
Toshiba Toshiba

Features
(1) High-speed switching
(2) Low gate charge: QSW = 8.2 nC (typ.)
(3) Low drain-source on-resistance: RDS(ON) = 5.8 mΩ (typ.) (VGS = 10 V)
(4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
(5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)


APPLICATIONs
 • Switching Voltage Regulators
 • Motor Drivers
 • Power Management Switches

Page Link's: 1  2  3  4  5  6  7  8  9 

Número de pieza
componentes Descripción
PDF
Fabricante
MOSFETs Silicon N-Channel MOS (U-MOSVI-H)
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MOSFETs Silicon N-Channel MOS (U-MOSVI-H)
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MOSFETs Silicon N-Channel MOS (U-MOSVI-H) ( Rev : 2011 )
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MOSFETs Silicon N-Channel MOS (U-MOSVI-H)
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Unspecified
MOSFETs Silicon N-Channel MOS (U-MOSVI-H) ( Rev : 2011 )
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Toshiba
MOSFETs Silicon N-Channel MOS (U-MOSVI-H)
Ver
Toshiba
MOSFETs Silicon N-Channel MOS (U-MOSVI-H) ( Rev : 2011 )
Ver
Toshiba
MOSFETs Silicon N-Channel MOS (U-MOSVI-H)
Ver
Toshiba
MOSFETs Silicon N-Channel MOS (U-MOSVI-H)
Ver
Toshiba
MOSFETs Silicon N-channel MOS (U-MOS-H)
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Toshiba

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