TPC8103 Hoja de datos - Toshiba
Número de pieza
TPC8103
componentes Descripción
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page
7 Pages
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311.9 kB
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Toshiba
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 9.5 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 20 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)
• Enhancement-mode: Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
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Fabricante
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) ( Rev : 2003 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V) ( Rev : 2009 )
Toshiba
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