Forward Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－ MOSⅢ )
Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON
N CHANNEL MOS TYPE(U－ MOSⅢ )

DC-DC CONVERTER
NOTEBOOK PC
PORTABLE MACHINES AND TOOLS

• Includes Schottky Barrier Diode Type. (Q2)
• Compact and thin package, and a small mounting area. (Q1,Q2)
• High Speed Switching.(Q1)
• Small Gate Charge.(Q1): Qg＝ 17nC(Typ.)
• Low Drain-Source ON Resistance(Q2) RDS (ON) = 13 mΩ (Typ.)
• High forward Transfer Admittance(Q2): |Yfs| = 11 S (typ.)
• Low Leakage Current. (Q1,Q2): IDSS = 10 µA(Max.) (VDS = 30 V)
• Enhancement-Mode (Q1,Q2) Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA)