datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga
HOME  >>>  Vishay Semiconductors  >>> TS9414VB PDF

TS9414VB Hoja de datos - Vishay Semiconductors

TS9414VB image

Número de pieza
TS9414VB

Other PDF
  2017  

PDF
DOWNLOAD     

page
4 Pages

File Size
83.5 kB

Fabricante
Vishay
Vishay Semiconductors Vishay

DESCRIPTION
TS9414VB is a high power infrared, 940 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”.


FEATURES
• Package type: chip
• Package form: single chip
• Technology: surface emitter
• Dimensions chip (L x W x H in mm):
   0.355 x 0.355 x 0.17
• Peak wavelength: λ = 940 nm
• Material categorization:
   for definitions of compliance please see
   www.vishay.com/doc?99912


Número de pieza
componentes Descripción
PDF
Fabricante
Specification of High Power IR Emitting Diode Chip
Ver
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip ( Rev : 2017 )
Ver
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip
Ver
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip
Ver
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip ( Rev : 2012 )
Ver
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip ( Rev : 2012 )
Ver
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip
Ver
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip
Ver
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip ( Rev : 2017 )
Ver
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip
Ver
Vishay Semiconductors

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Russianрусский

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]